STL92N10F7AG Datasheet - STMicroelectronics

STL92N10F7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes G(4) STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more 12 34 efficient switching. S(1, 2, 3) Top View AM15540v2 Order.

STL92N10F7AG Features

* Order code VDS RDS(on) max STL92N10F7AG 100 V 0.0095 Ω ID 16 A PTOT 5W

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High

STL92N10F7AG-STMicroelectronics.pdf