STL92N10F7AG Datasheet - STMicroelectronics

STL92N10F7AG, N-channel Power MOSFET

STL92N10F7AG Automotive-grade N-channel 100 V, 0.008 Ω typ.,16 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data 1.
This N-channel Power MOSFET utilizes G(4) STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resista.

Features

* Order code VDS RDS(on) max STL92N10F7AG 100 V 0.0095 Ω ID 16 A PTOT 5W

Applications

* and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness
* Wettable flank package Applications

STL92N10F7AG-STMicroelectronics.pdf