STL9N60M2 Datasheet - STMicroelectronics

STL9N60M2, N-channel Power MOSFET

STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data 1 2 3 4.
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

Features

* Order code VDS @ TJmax RDS(on) max ID STL9N60M2 650 V 0.86 Ω 4.8 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested

STL9N60M2-STMicroelectronics.pdf