STL9N3LLH5 Datasheet (ST Microelectronics)

STL9N3LLH5, Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

The lowest available RDS(on) *Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

STL9N3LLH5 Features

* Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™(