STP80N70F6 - N-CHANNEL POWER MOSFET

STMicroelectronics

Datasheet Details

Part number	STP80N70F6
Manufacturer	STMicroelectronics ↗
File Size	752.84 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STP80N70F6-STMicroelectronics.pdf

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V).
RDS(on).
Qg industry benchmark.
Extremely low on-resistance RDS(on).
High avalanche ruggedness.
Low gate drive power losses.
Very low switching gate charge TAB 3 2 1 TO-220.

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Published: Jan 22, 2019 |