STP80N70F6 Datasheet (STMicroelectronics)

STP80N70F6, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram $4!" ' 3 !-V Table 1.

Device sum

STP80N70F6 Features

* Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V)

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses

* Very low switching gate charge TAB 3 2 1 TO-220