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STPSC2H065 Datasheet - STMicroelectronics

STPSC2H065 power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter.

STPSC2H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* ECOPACK2 compliant component

* Power efficient product Applications

* Switch mode power supply

* PFC

STPSC2H065 Datasheet (231.96 KB)

Preview of STPSC2H065 PDF

Datasheet Details

Part number:

STPSC2H065

Manufacturer:

STMicroelectronics ↗

File Size:

231.96 KB

Description:

Power schottky diode.

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