STPSC2H065 Datasheet (STMicroelectronics)

STPSC2H065, power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patter

STPSC2H065 Features

* No reverse recovery charge in application current range

* Switching behavior independent of temperature

* High forward surge capability

* ECOPACK2 compliant component

* Power efficient product Applications

* Switch mode power supply

* PFC