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STPSC20H065C

power Schottky silicon carbide diode

STPSC20H065C Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a sil

STPSC20H065C General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC20H065C Datasheet (164.82 KB)

Preview of STPSC20H065C PDF

Datasheet Details

Part number:

STPSC20H065C

Manufacturer:

STMicroelectronics ↗

File Size:

164.82 KB

Description:

Power schottky silicon carbide diode.

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STPSC20H065C power Schottky silicon carbide diode STMicroelectronics

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