STPSC20H12-Y Datasheet (STMicroelectronics) - silicon carbide power Schottky diode

STPSC20H12-Y, silicon carbide power Schottky diode

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patte

STPSC20H12-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* D²PAK HV creepage distance (anode to cathode) = 5.38