STPSC20H12-Y silicon carbide power Schottky diode

STMicroelectronics

Description

STPSC20H12-Y Datasheet Automotive 1200 V, 20 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product .
The SiC diode is an ultra high performance power Schottky diode.

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Datasheet Specifications

Part number: STPSC20H12-Y
Manufacturer: STMicroelectronics ↗
File Size: 462.67 KB
Datasheet: STPSC20H12-Y-STMicroelectronics.pdf
Description: silicon carbide power Schottky diode

Features

* AEC-Q101 qualified
* No or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* PPAP capable
* Operating Tj from -40 °C to 175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38

STPSC20H12-Y Distributors

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STPSC20H12-Y silicon carbide power Schottky diode STMicroelectronics

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