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STPSC20H12-Y Datasheet - STMicroelectronics

STPSC20H12-Y silicon carbide power Schottky diode

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patte.

STPSC20H12-Y Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* D²PAK HV creepage distance (anode to cathode) = 5.38

STPSC20H12-Y Datasheet (462.67 KB)

Preview of STPSC20H12-Y PDF

Datasheet Details

Part number:

STPSC20H12-Y

Manufacturer:

STMicroelectronics ↗

File Size:

462.67 KB

Description:

Silicon carbide power schottky diode.

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STPSC20H12-Y silicon carbide power Schottky diode STMicroelectronics

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