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STPSC20H12 Datasheet - STMicroelectronics

STPSC20H12 power Schottky silicon carbide diode

The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construct.

STPSC20H12 Features

* None or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* Operating Tj from -40 °C to 175 °C

* ECOPACK2 compliant component Applications

* Solar inverter

* Boost PFC

* Air co

STPSC20H12 Datasheet (407.32 KB)

Preview of STPSC20H12 PDF

Datasheet Details

Part number:

STPSC20H12

Manufacturer:

STMicroelectronics ↗

File Size:

407.32 KB

Description:

Power schottky silicon carbide diode.

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STPSC20H12 power Schottky silicon carbide diode STMicroelectronics

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