STPSC20H12 Datasheet (STMicroelectronics) - power Schottky silicon carbide diode

STPSC20H12, power Schottky silicon carbide diode

The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construct

STPSC20H12 Features

* None or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high voltage periphery

* Operating Tj from -40 °C to 175 °C

* ECOPACK2 compliant component Applications

* Solar inverter

* Boost PFC

* Air co