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STPSC20H065C-Y Datasheet - STMicroelectronics

STPSC20H065C-Y Automotive 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern.

STPSC20H065C-Y Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Dedicated to PFC applications

* High forward surge capability

* AEC-Q101 qualified

* ECOPACK®2 compliant component

* PPAP capable Datasheet - production data

STPSC20H065C-Y Datasheet (150.98 KB)

Preview of STPSC20H065C-Y PDF

Datasheet Details

Part number:

STPSC20H065C-Y

Manufacturer:

STMicroelectronics ↗

File Size:

150.98 KB

Description:

Automotive 650v power schottky silicon carbide diode.

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STPSC20H065C-Y Automotive 650V power Schottky silicon carbide diode STMicroelectronics

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