STPSC20H12CWY Datasheet (STMicroelectronics) - power Schottky silicon carbide diode

STPSC20H12CWY, power Schottky silicon carbide diode

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is sho

STPSC20H12CWY Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high-voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* ECOPACK2 compliant Applications

* OBC (On Boa