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STPSC20H12CWY Datasheet - STMicroelectronics

STPSC20H12CWY power Schottky silicon carbide diode

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is sho.

STPSC20H12CWY Features

* AEC-Q101 qualified

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Robust high-voltage periphery

* PPAP capable

* Operating Tj from -40 °C to 175 °C

* ECOPACK2 compliant Applications

* OBC (On Boa

STPSC20H12CWY Datasheet (252.98 KB)

Preview of STPSC20H12CWY PDF

Datasheet Details

Part number:

STPSC20H12CWY

Manufacturer:

STMicroelectronics ↗

File Size:

252.98 KB

Description:

Power schottky silicon carbide diode.

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STPSC20H12CWY power Schottky silicon carbide diode STMicroelectronics

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