STPSC2H12-Y Datasheet (STMicroelectronics) - 2A power Schottky silicon carbide diode

STPSC2H12-Y, 2A power Schottky silicon carbide diode

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing patte

STPSC2H12-Y Features

* AEC-Q101 qualified

* PPAP capable

* No or negligible reverse recovery

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* Creepage distance of 3 mm as per IEC 60664-1

* ECOPACK2 compliant component Applications

* Bo