STPSC2H12-Y 2A power Schottky silicon carbide diode

STMicroelectronics

Description

STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Product label Product status link STPSC2H12-Y Product summary IF.
The SiC diode is an ultra-high performance power Schottky diode.

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Datasheet Specifications

Part number: STPSC2H12-Y
Manufacturer: STMicroelectronics ↗
File Size: 294.43 KB
Datasheet: STPSC2H12-Y-STMicroelectronics.pdf
Description: 2A power Schottky silicon carbide diode

Features

* AEC-Q101 qualified
* PPAP capable
* No or negligible reverse recovery
* High forward surge capability
* Operating Tj from -40 °C to 175 °C
* Creepage distance of 3 mm as per IEC 60664-1

Applications

* Bootstrap function of SiC MOS-FETS
* Snubber diode

STPSC2H12-Y Distributors

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STPSC2H12-Y power Schottky silicon carbide diode STMicroelectronics

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