Datasheet4U Logo Datasheet4U.com

STPSC2H12-Y

2A power Schottky silicon carbide diode

STPSC2H12-Y Features

* AEC-Q101 qualified

* PPAP capable

* No or negligible reverse recovery

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* Creepage distance of 3 mm as per IEC 60664-1

* ECOPACK2 compliant component Applications

* Bo

STPSC2H12-Y General Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patte.

STPSC2H12-Y Datasheet (294.43 KB)

Preview of STPSC2H12-Y PDF

Datasheet Details

Part number:

STPSC2H12-Y

Manufacturer:

STMicroelectronics ↗

File Size:

294.43 KB

Description:

2a power schottky silicon carbide diode.
STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Product label Product status link STPSC2H12-Y Product summary IF.

📁 Related Datasheet

STPSC2H12 1200V power Schottky silicon carbide diode (STMicroelectronics)

STPSC2H065 power Schottky diode (STMicroelectronics)

STPSC20065-Y power Schottky silicon carbide diode (STMicroelectronics)

STPSC2006CW 600V power Schottky silicon carbide diode (STMicroelectronics)

STPSC20G12-Y 20A power Schottky high surge silicon carbide diode (STMicroelectronics)

STPSC20H065C power Schottky silicon carbide diode (STMicroelectronics)

STPSC20H065C-Y Automotive 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC20H065CWLY Automotive 20A 650V power Schottky silicon carbide diode (STMicroelectronics)

STPSC20H12 power Schottky silicon carbide diode (STMicroelectronics)

STPSC20H12-Y silicon carbide power Schottky diode (STMicroelectronics)

TAGS

STPSC2H12-Y power Schottky silicon carbide diode STMicroelectronics

Image Gallery

STPSC2H12-Y Datasheet Preview Page 2 STPSC2H12-Y Datasheet Preview Page 3

STPSC2H12-Y Distributor