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STPSC2H12-Y Datasheet - STMicroelectronics

STPSC2H12-Y 2A power Schottky silicon carbide diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patte.

STPSC2H12-Y Features

* AEC-Q101 qualified

* PPAP capable

* No or negligible reverse recovery

* High forward surge capability

* Operating Tj from -40 °C to 175 °C

* Creepage distance of 3 mm as per IEC 60664-1

* ECOPACK2 compliant component Applications

* Bo

STPSC2H12-Y Datasheet (294.43 KB)

Preview of STPSC2H12-Y PDF

Datasheet Details

Part number:

STPSC2H12-Y

Manufacturer:

STMicroelectronics ↗

File Size:

294.43 KB

Description:

2a power schottky silicon carbide diode.

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STPSC2H12-Y power Schottky silicon carbide diode STMicroelectronics

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