Datasheet Details
Part number:
STPSC2006CW
Manufacturer:
File Size:
75.08 KB
Description:
600v power schottky silicon carbide diode.
STPSC2006CW-STMicroelectronics.pdf
STPSC2006CW-STMicroelectronics.pdf
Datasheet Details
Part number:
STPSC2006CW
Manufacturer:
File Size:
75.08 KB
Description:
600v power schottky silicon carbide diode.
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns
STPSC2006CW Distributors
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