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STPSC2006CW

600V power Schottky silicon carbide diode

STPSC2006CW Features

* No or negligible reverse recovery

* Switching behavior independent of temperature

* Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap mate

STPSC2006CW General Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns.

STPSC2006CW Datasheet (75.08 KB)

Preview of STPSC2006CW PDF

Datasheet Details

Part number:

STPSC2006CW

Manufacturer:

STMicroelectronics ↗

File Size:

75.08 KB

Description:

600v power schottky silicon carbide diode.

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STPSC2006CW 600V power Schottky silicon carbide diode STMicroelectronics

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