STS9D8NH3LL Datasheet - STMicroelectronics

STS9D8NH3LL Dual N-channel Power MOSFET

This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 pack.

STS9D8NH3LL Features

* www.DataSheet4U.com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL

* Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application

* Switching applications Figure 1. Internal schematic diagram

STS9D8NH3LL Datasheet (461.18 KB)