STS9D8NH3LL

Dual N-channel Power MOSFET

STMicroelectronics

STS9D8NH3LL Features

* www.DataSheet4U.com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL

* Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application

* Switching applications Figure 1. Internal schematic diagram

STS9D8NH3LL General Description

This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 pack.

STS9D8NH3LL Datasheet (461.18 KB)