* Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A
* Very low on-resistance
* Very low capacitance and gate charge
* High avalanche ruggedness
* Ultra logic level Applications
* Switching applications Description This device exhibits low on-state resistance and
STS9P2UH7 Datasheet (418.30 KB)
STS9P2UH7
418.30 KB
P-channel power mosfet.
STS9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package
Datasheet - production data
5 8
1
SO-8
4
Figure 1: Inter.
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