STS9P3LLH6 Datasheet, Mosfet, STMicroelectronics

STS9P3LLH6 Features

• Mosfet Order code VDS STS9P3LLH6 -30 V
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss RDS(on) max

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STS9P3LLH6

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STMicroelectronics ↗

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📄 Datasheet

Description:

P-channel power mosfet. This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Po

STS9P3LLH6 Application

• Applications
• Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a

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STS9P3LLH6

STMicroelectronics

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