* Order code VDS STS9P3LLH6 -30 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max. ID 15 mΩ -9 A Applications
* Switching applications Description This device is a P-channel Power MOS
STS9P3LLH6 Datasheet (261.23 KB)
STS9P3LLH6
261.23 KB
P-channel power mosfet.
STS9P3LLH6
Datasheet
P-channel -30 V, 12 mΩ typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM0.
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