STTH12012TV Datasheet - STMicroelectronics

Ultrafast recovery - 1200 V diode

STTH12012TV Features

* Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500 VRMS Capacitance = 45 pF ISOTOP Order

STTH12012TV General Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial pow.

STTH12012TV Datasheet (160.76 KB)

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STTH12012TV

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STMicroelectronics ↗

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Ultrafast recovery - 1200 v diode.
STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics K2 A2 A2 K1 IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 1200 V 150° C K1 A.

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STTH12012TV General Description

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