STW26NM60-H Datasheet, Mosfets, STMicroelectronics

✔ STW26NM60-H Features

Type STW26NM60N-H
VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 A

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Powe

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STW26NM60-H

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Power mosfets. This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical str

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STW26NM60-H Power MOSFETs STMicroelectronics