STW26NM50 Datasheet - ST Microelectronics

N-CHANNEL Power MOSFET

STW26NM50 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STW26NM50 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s .

STW26NM50 Datasheet (539.67 KB)

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STW26NM50

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STMicroelectronics ↗

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N-channel power mosfet.
STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh™Power MOSFET TYPE STW26NM50 VDSS 500 V RDS(on) < 0.120 Ω ID 30 A TYPICAL RDS(on).

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STW26NM50 N-CHANNEL Power MOSFET ST Microelectronics

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STW26NM50 Features

STW26NM50 General Description

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