* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a L
STS3420
SamHop Microelectronics
103.99 KB
N-channel mosfet.
Green Product
STS3420
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON).
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