* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°
STS3429
SamHop Microelectronics
100.85 KB
P-channel enhancement mode field effect transistor.
Green Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor STS3429 Ver 2.0 PRODUCT SUMMARY VDSS ID RDS(ON) (.
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