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K4S1G0732B-TC75, K4S1G0732B SDRAM stacked 1Gb B-die

K4S1G0732B-TC75 Description

SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the ri.
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high.

K4S1G0732B-TC75 Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)
* All inputs are sampled at

K4S1G0732B-TC75 Applications

* Ordering Information Part No. K4S1G0732B-TC75 Orgainization st.128Mb x8 Max Freq. 133MHz Interface LVTTL Package 54pin TSOP(II) Organization st.128Mx8 Row Address A0~A12 Column Address A0-A9, A11 Row & Column address configuration Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) Package P

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S1G0732B-TC75, K4S1G0732B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S1G0732B-TC75, K4S1G0732B
Manufacturer
Samsung semiconductor
File Size
126.67 KB
Datasheet
K4S1G0732B_Samsungsemiconductor.pdf
Description
SDRAM stacked 1Gb B-die
Note
This datasheet PDF includes multiple part numbers: K4S1G0732B-TC75, K4S1G0732B.
Please refer to the document for exact specifications by model.

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SDRAM stacked 1Gb B-die Samsung semiconductor
Samsung semiconductor K4S1G0732B-TC75-like datasheet