Datasheet Details
- Part number
- K4S511632M
- Manufacturer
- Samsung semiconductor
- File Size
- 111.71 KB
- Datasheet
- K4S511632M_Samsungsemiconductor.pdf
- Description
- 512Mbit SDRAM
K4S511632M Description
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May.2002 Samsung Electronics reserves the right to c.
The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high p.
K4S511632M Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
K4S511632M Applications
* ORDERING INFORMATION
Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register
LDQM
Bank Select 8M x 16 8M x 16 8M x 16 8M x 16 Refresh Counter
Output Buffer
Row Decoder
Sense AMP
Row Buffer
DQi
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