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K6F1616U6C 16Mb(1M x 16 bit) Low Power SRAM

K6F1616U6C Description

www.DataSheet4U.com K6F1616U6C Family CMOS SRAM 16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P.
The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F1616U6C Features

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

K6F1616U6C Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K6F1616U6C
Manufacturer
Samsung semiconductor
File Size
182.63 KB
Datasheet
K6F1616U6C_Samsungsemiconductor.pdf
Description
16Mb(1M x 16 bit) Low Power SRAM

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16Mb1M bit Low Power SRAM Samsung semiconductor
Samsung semiconductor K6F1616U6C-like datasheet