K6F4008U2E 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F4008U2E Description

K6F4008U2E Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.History 0.
The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F4008U2E Features

* Process Technology: Full CMOS
* Organization: 512K x8 bit
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

📥 Download Datasheet

K6F4008U2E Datasheet Preview — Preview of K6F4008U2E PDF

Datasheet Details

Part number: K6F4008U2E
Manufacturer: Samsung semiconductor
File Size: 106.86 KB
Datasheet: K6F4008U2E-Samsungsemiconductor.pdf
Description: 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

📁 Related Datasheet

K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)
K6F1008R2M - SRAM (Samsung Electronics)
K6F1008S2M - SRAM (Samsung Electronics)
K6F1008V2M - SRAM (Samsung Electronics)

📌 All Tags

512K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

Samsung semiconductor K6F4008U2E-like datasheet

K6F4008U2G - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008R2C - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4E-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016R4G-F - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM