K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F8016R6B Description

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History R.
The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F8016R6B Features

* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 1.65~2.2V
* Low Data Retention Voltage: 1.0V(Min)
* Three State Outputs

📥 Download Datasheet

K6F8016R6B Datasheet Preview — Preview of K6F8016R6B PDF

Datasheet Details

Part number: K6F8016R6B
Manufacturer: Samsung semiconductor
File Size: 141.55 KB
Datasheet: K6F8016R6B_Samsungsemiconductor.pdf
Description: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

📁 Related Datasheet

K6F1008R2M - SRAM (Samsung Electronics)
K6F1008S2M - SRAM (Samsung Electronics)
K6F1008V2M - SRAM (Samsung Electronics)
K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)

📌 All Tags

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

Samsung semiconductor K6F8016R6B-like datasheet

K6F8016R6A - CMOS SRAM
K6F8016R6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016T6C - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6 - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016V3A - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM