K6F8016U6 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F8016U6 Description

K6F8016U6B Family Document Title CMOS SRAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.History .
The K6F8016U6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F8016U6 Features

* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs
* Package Type: 48-TBGA-6.00x7.00 CMOS SRAM 512K x 16 bit Super Low Power and Low Voltage Full CMO

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Datasheet Details

Part number: K6F8016U6
Manufacturer: Samsung semiconductor
File Size: 157.38 KB
Datasheet: K6F8016U6_Samsungsemiconductor.pdf
Description: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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