Datasheet Details
- Part number
- KM718V089
- Manufacturer
- Samsung semiconductor
- File Size
- 536.55 KB
- Datasheet
- KM718V089_Samsungsemiconductor.pdf
- Description
- 512Kx36 & 1Mx18 Synchronous SRAM
KM718V089 Description
KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.No..
The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and.
KM718V089 Features
* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V +0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V +0.165V/-0.16
KM718V089 Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
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