2SA1850 - PNP/NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Adoption of FBET process.
High Gain Bandwidth product (fT=400MHz).
High breakdown voltage (VCEO=120V).
Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.7pF/NPN, 2.2pF/PNP.
Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084 [2SA1850/2SC4824] ( ) : 2SA1850 E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em.

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Sanyo Semicon Device 2SA1850-like datasheet

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