2SA1853 - PNP/NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Adoption of FBET process.
High fT : fT=300MHz.
High breakdown voltage : VCEO=200V.
Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.2pF/NPN, 2.7pF/PNP.
Possible to offer the 2SA1853/2SC4827 devices in a tepa reel packaging, which facilitates automatic incertion. ( ) : 2SA1853 Package Dimensions unit:mm 2084B [2SA1853/2SC4827] 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Co.

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Sanyo Semicon Device 2SA1853-like datasheet

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