2SD1626 - PNP / NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted o.

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Published: Apr 3, 2005 |