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2SJ630 - General-Purpose Switching Device Applications

2SJ630 Description

www.DataSheet4U.com Ordering number : ENA0489 2SJ630 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 .

2SJ630 Applications

* Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP

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Datasheet Details

Part number
2SJ630
Manufacturer
Sanyo Semicon Device
File Size
64.28 KB
Datasheet
2SJ630_SanyoSemiconDevice.pdf
Description
General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications Sanyo Semicon Device
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