Datasheet4U Logo Datasheet4U.com

RD0506T High-Speed Switching Diode

RD0506T Description

www.DataSheet.co.kr Ordering number : ENA1574 RD0506T SANYO Semiconductors DATA SHEET RD0506T .

RD0506T Features

* Diffused Junction Silicon Diode Low VF
* High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.6V). Halogen free compliance. Spe

RD0506T Applications

* outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for

📥 Download Datasheet

Preview of RD0506T PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RD0506T
Manufacturer
Sanyo Semicon Device
File Size
270.72 KB
Datasheet
RD0506T_SanyoSemiconDevice.pdf
Description
High-Speed Switching Diode

📁 Related Datasheet

  • RD05MMP1 - Silicon RF Power MOS FET (Mitsubishi Electric)
  • RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
  • RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
  • RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
  • RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
  • RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
  • RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
  • RD02MUS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)

📌 All Tags

High-Speed Switching Diode Sanyo Semicon Device
Sanyo Semicon Device RD0506T-like datasheet