Part number:
2SB595
Manufacturer:
SavantIC
File Size:
166.83 KB
Description:
Silicon power transistor.
2SB595
SavantIC
166.83 KB
Silicon power transistor.
📁 Related Datasheet
2SB595 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB595
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown V.
2SB595 - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter .
2SB596 - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • Good Linearity of hp E . • Complementary to 2SD526. • Reme.
2SB596 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage-
.
2SB502 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB502A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
2SB503 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=.
2SB503A - SILICON PNP TRANSISTOR
(Toshiba)
SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat.
