2SC2167 Datasheet, Transistor, SavantIC

PDF File Details

Part number:

2SC2167

Manufacturer:

SavantIC

File Size:

116.33kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

With TO-220 package

High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS

Power amplifier

2SC2167 Application

• Applications
• Power amplifier applications
• TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounti

TAGS

2SC2167

SavantIC

📁 Related Datasheet

2SC2166 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliab.

2SC2167 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC2167 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (.

2SC2168 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (.

2SC2168 - Silicon NPN Power Transistor (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon NPN Power Transistors 2SC2168 DESCRIPTION ·With TO-220 package ·High coll.

2SC2101 - Silicon NPN POWER TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.) ( f=175MHz, VCC=12.5V, Pi=0.5W ) Un.

2SC2101 - Silicon NPN POWER TRANSISTOR (HGSemi)
H G Semiconductors HG RF POWER TRANSISTOR 2SC2101 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit.

2SC2102 - SILICON NPN TRANSISTOR (Toshiba)
1 SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po=15W (Min.) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W).

2SC2103A - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 1.

2SC2104 - Silicon NPN Transistor (Toshiba)
: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) ..

2SC2105 - SILICON NPN TRANSISTOR (Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.) (f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.