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2SC2166 - NPN Transistor

2SC2166 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 .
High Power Gain- : Gpe≥ 13. High Reliability. Minimum Lot-to-Lot variations for robust device performance.

2SC2166 Applications

* Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Voltage RBE= 10Ω 45 V VEBO Emitter-Base Voltage 4 V IC Collector Curre

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Datasheet Details

Part number
2SC2166
Manufacturer
INCHANGE
File Size
181.81 KB
Datasheet
2SC2166-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SC2166-like datasheet