2SC2166 - NPN Transistor
*High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V *High Reliability *Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS *Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.
ABSOLUTE MAXIMUM R
