Part number:
2SC2167
Manufacturer:
INCHANGE
File Size:
226.41 KB
Description:
Npn transistor.
2SC2167
INCHANGE
226.41 KB
Npn transistor.
📁 Related Datasheet
2SC2166 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2166
DESCRIPTION ·High Power Gain-
: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliab.
2SC2167 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC2167
DESCRIPTION ·With TO-220 package ·High coll.
2SC2168 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC2168
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·DC Current Gain-
: hFE= 60(Min)@ (.
2SC2168 - Silicon NPN Power Transistor
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC2168
DESCRIPTION ·With TO-220 package ·High coll.
2SC2101 - Silicon NPN POWER TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.)
( f=175MHz, VCC=12.5V, Pi=0.5W )
Un.
2SC2101 - Silicon NPN POWER TRANSISTOR
(HGSemi)
H G Semiconductors
HG RF POWER TRANSISTOR
2SC2101
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and condit.
2SC2102 - SILICON NPN TRANSISTOR
(Toshiba)
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W).
2SC2103A - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 1.
