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STT3470N N-Channel MOSFET

STT3470N Description

STT3470N Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 mļ— N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies .
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

STT3470N Features

* DG
* Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 R

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Datasheet Details

Part number
STT3470N
Manufacturer
SeCoS
File Size
163.00 KB
Datasheet
STT3470N-SeCoS.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SeCoS
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