STT3470N Datasheet - SeCoS

STT3470N, N-Channel MOSFET

STT3470N Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies .
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

Features

* DG
* Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 R

STT3470N-SeCoS.pdf