HCS65R160T - N-Channel MOSFET
HCS65R160T Features
* Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 20 0.16 41 Unit V A ȍ nC Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
