HCS65R1K0S Datasheet - SemiHow

650V N-Channel Super Junction MOSFET

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 4.8 1.0 9.3 Unit V A Ω nC Application

HCS65R1K0S

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650v n-channel super junction mosfet.

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