HCS65R110S - 650V N-Channel Super Junction MOSFET
HCS65R110S Features
* Very Low FOM (RDS(on) X Qg)
* Extremely low switching loss
* Excellent stability and uniformity
* 100% Avalanche Tested
* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 29.1 110 75 Unit V A mΩ nC Application
