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HFP12N60S N-Channel MOSFET

HFP12N60S Description

HFP12N60S Nov 2007 HFP12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A .

HFP12N60S Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFP12N60S
Manufacturer
SemiHow
File Size
256.92 KB
Datasheet
HFP12N60S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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