Datasheet4U Logo Datasheet4U.com

HFP2N60 N-Channel MOSFET

HFP2N60 Description

HFP2N60 June 2005 HFP2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A .

HFP2N60 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Test

📥 Download Datasheet

Preview of HFP2N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HFP2N60
Manufacturer
SemiHow
File Size
174.11 KB
Datasheet
HFP2N60-SemiHow.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP50N06 - N-Channel MOSFET (Shantou Huashan)
  • HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

📌 All Tags

N-Channel MOSFET SemiHow
SemiHow HFP2N60-like datasheet