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HFP2N70S - N-Channel MOSFET

HFP2N70S Description

HFP2N70S Dec 2009 HFP2N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 Ω ID = 1.6 A .

HFP2N70S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.2 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ. ) @VGS=10V  100% Avalanche Test

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Datasheet Details

Part number
HFP2N70S
Manufacturer
SemiHow
File Size
914.98 KB
Datasheet
HFP2N70S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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