Datasheet4U Logo Datasheet4U.com

HFP2N65S N-Channel MOSFET

HFP2N65S Description

HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 Ω ID = 1.8 A .

HFP2N65S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ. ) @VGS=10V  100% Avalanche Test

📥 Download Datasheet

Preview of HFP2N65S PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HFP2N65S
Manufacturer
SemiHow
File Size
745.23 KB
Datasheet
HFP2N65S-SemiHow.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP50N06 - N-Channel MOSFET (Shantou Huashan)
  • HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
  • HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

📌 All Tags

N-Channel MOSFET SemiHow
SemiHow HFP2N65S-like datasheet