Datasheet Specifications
- Part number
- HFP2N65S
- Manufacturer
- SemiHow
- File Size
- 745.23 KB
- Datasheet
- HFP2N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 Ω ID = 1.8 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5.0 Ω (Typ. ) @VGS=10V 100% Avalanche TestHFP2N65S Distributors
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