HFP2N65S Datasheet - SemiHow

HFP2N65S N-Channel MOSFET

HFP2N65S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFP2N65S Datasheet (745.23 KB)