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HFP2N65 N-Channel MOSFET

HFP2N65 Description

HFP2N65 July 2007 HFP2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A .

HFP2N65 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ. ) @VGS=10V  100% Avalanche Test

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Datasheet Details

Part number
HFP2N65
Manufacturer
SemiHow
File Size
836.77 KB
Datasheet
HFP2N65-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
SemiHow HFP2N65-like datasheet