HFP2N65 Datasheet - SemiHow

HFP2N65 N-Channel MOSFET

HFP2N65 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFP2N65 Datasheet (836.77 KB)