BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

Siemens Semiconductor Group

Datasheet Details

Part number: BFY180
Manufacturer: Siemens Semiconductor Group
File Size: 121.43 KB
Datasheet: BFY180_SiemensSemiconductorGroup.pdf
Description: HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

HiRel Discrete and Microwave Semiconductor.
For low power amplifiers at collector currents from 0.2 to 2.5 mA.
Hermetically sealed microwave package.
fT = 6.5 GHz, F = 2.6 dB at 2 GHz.
qualified.
ESA/SCC Detail Spec. No. : 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Qua.

📁 Related Datasheet

📌 All Tags

Siemens Semiconductor Group BFY180-like datasheet

BFY181 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY182 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY183 - HiRel NPN Silicon RF Transistor
BFY193 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
BFY196 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
BFY280 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

BFY180 Stock/Price