STS65R580DS2 Datasheet - Silan Microelectronics

STS65R580DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superio.

STS65R580DS2 Features

* 8A, 650V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1 3

STS65R580DS2-SilanMicroelectronics.pdf