STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Description

Silan Microelectronics STS65R580D(F)(S)(MJ)S2_Datasheet 8A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

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Datasheet Specifications

Part number: STS65R580DS2
Manufacturer: Silan Microelectronics
File Size: 440.32 KB
Datasheet: STS65R580DS2-SilanMicroelectronics.pdf
Description: 650V SUPER JUNCTION MOS POWER TRANSISTOR

Features

* 8A, 650V, RDS(on)(typ. )=0.52@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 2 1 3 1 3

STS65R580DS2 Distributors

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STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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