STS65R580DS2 Datasheet - Silan Microelectronics

STS65R580DS2, 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics STS65R580D(F)(S)(MJ)S2_Datasheet 8A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

datasheet Preview Page 1 from Datasheet4u.com

STS65R580DS2-SilanMicroelectronics.pdf

STS65R580DS2 Datasheet Preview — Preview of STS65R580DS2 PDF

Datasheet Details

Part number:

STS65R580DS2

Manufacturer:

Silan Microelectronics

File Size:

440.32 KB

Description:

650V SUPER JUNCTION MOS POWER TRANSISTOR

Features

* 8A, 650V, RDS(on)(typ. )=0.52@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 2 1 3 1 3

STS65R580DS2 Distributors

📁 Related Datasheet

STS6308 STS6409 STS6415 STS6601 STS6604L STS6DNF30L

📌 All Tags

STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Silan Microelectronics STS65R580DS2-like datasheet