Datasheet4U Logo Datasheet4U.com

STS65R580DS2 Datasheet - Silan Microelectronics

STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superio.

STS65R580DS2 Features

* 8A, 650V, RDS(on)(typ.)=0.52@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1 3

STS65R580DS2-SilanMicroelectronics.pdf

Preview of STS65R580DS2 PDF
STS65R580DS2 Datasheet Preview Page 2 STS65R580DS2 Datasheet Preview Page 3

Datasheet Details

Part number:

STS65R580DS2

Manufacturer:

Silan Microelectronics

File Size:

440.32 KB

Description:

650v super junction mos power transistor.

📁 Related Datasheet

STS65R580FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R580FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R580SS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R190DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R190FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R190L8AS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R190SS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

STS65R190TS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

TAGS

STS65R580DS2 STS65R580DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

STS65R580DS2 Distributor