STS65R580SS2, STS65R580DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	STS65R580SS2, STS65R580DS2
Manufacturer	Silan Microelectronics
File Size	440.32 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R580DS2-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: STS65R580SS2, STS65R580DS2. Please refer to the document for exact specifications by model.

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

8A, 650V, RDS(on)(typ. )=0.52@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY.

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Published: Mar 18, 2025 |