SVF11N65T Datasheet (Silan Microelectronics)

SVF11N65T, 650V N-CHANNEL MOSFET

The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provid

SVF11N65T Features

* 11A, 650V, RDS(on)(typ.)= 0.76Ω@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF11N65T SVF11N65F Package TO-220-3L TO-220F-3L Marking SVF11N65T SVF11N65F Material Pb free Pb free Packing Tube