SVFP14N60CFJD Datasheet - Silan Microelectronics

600V N-CHANNEL MOSFET

SVFP14N60CFJD Features

* 14A, 600V, RDS(on)(typ.)=0.54@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L ORDERING INFORMATION Part No. SVFP14N60CFJD Package TO-220FJD-3L Marking P14N60CFJD Hazardous Substance Control

SVFP14N60CFJD General Description

SVFP14N60CFJD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performanc.

SVFP14N60CFJD Datasheet (248.82 KB)